Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD |
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Authors: | Shui-Yang Lien Jun-Chin Liu |
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Affiliation: | a Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C. b Photovoltaics Technology Center, Industrial Technology Research Institute, Chutung, Hsinchu 31040, Taiwan, R.O.C. |
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Abstract: | A double-side (bifacial) heterojunction (HJ) Si solar cell was fabricated using hot-wire chemical vapor deposition. The properties of n-type, intrinsic and p-type Si films were investigated. In these devices, the doped microcrystalline Si layers (n-type Si for emitter and p-type Si for back contact) are combined with and without a thin intrinsic amorphous Si buffer layer. The maximum temperature during the whole fabrication process was kept below 150 °C. The influence of hydrogen pre-treatment and n-Si emitter thickness on performance of solar cells have been studied. The best bifacial Si HJ solar cell (1 cm2 sample) with an intrinsic layer yielded an active area conversion efficiency of 16.4% with an open circuit voltage of 0.645 V, short circuit current of 34.8 mA/cm2 and fill factor of 0.73. |
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Keywords: | Hot-wire chemical vapor deposition Microcrystalline silicon Heterojunction solar cell |
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