| In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices |
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| 作者姓名： | 潘东 宋化鼎 张珊 刘磊 文炼均 廖敦渊 卓然 王志川 张梓桐 杨帅 应江华 苗文韬 尚汝南 张浩 赵建华 |
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| 作者单位： | 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences;2. Center of Materials Science and Optoelectronics Engineering, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences;3. State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics,Tsinghua University;4. Beijing Academy of Quantum Information Sciences;5. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,Chinese Academy of Sciences;6. Frontier Science Center for Quantum Information |
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| 基金项目： | supported by the National Natural Science Foundation of China (Grant Nos. 92065106, 61974138, 12104053, and 11704364)；;the Beijing Natural Science Foundation (Grant No. 1192017)；;China Postdoctoral Science Foundation (Grant Nos. 2020M670173 and 2020T130058)； |
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| 摘 要： | We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(～30 nm) is much thinner than before(～100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p...
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