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Response of Sample Temperature during Straight-Line Ion Implantation |
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| Authors: | Jin Fanya Xu Liyun Shi ZhongbingLiu Huaying Wang Ke Shen Liru Tong HonghuiSouthwesten Institute of Physics Chengdu China |
| Affiliation: | Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China;Southwesten Institute of Physics, Chengdu 610041, China |
| Abstract: | A theoretical model for calculation of the sample temperature during straight-line nitrogen ion implantation was established based on the results of experiment in this paper. Taking the pure aluminum as the samples, and from the transformation of electric energy into thermal energy, the calculated values of the temperature were in good agreement with the measured values in the experiment. According to the simulation, this technology can be applied to the control of specimens temperature during the implantation. |
| Keywords: | ion implantation response of temperature simulation |
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