| Sb掺杂Hg1-xCdxTe的光致发光 |
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| 引用本文： | 常勇,褚君浩,唐文国,沈文忠,汤定元.Sb掺杂Hg1-xCdxTe的光致发光[J].物理学报,1997,46(5):959-963. |
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| 作者姓名： | 常勇 褚君浩 唐文国 沈文忠 汤定元 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室 |
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| 摘 要： | 对不同Sb掺杂浓度Hg1-xCdxTe（x≈0.38）样品在3.9—115K的温度范围内进行了光致发光实验测量，观察到与局域激子、带到带和施主受主对有关的辐射复合过程．并用光致发光手段发现Sb掺杂在x≈0.38的Hg1-xCdxTe中引入的约30meV的受主能级
关键词：
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| 关 键 词： | HgCdTe 铅 掺杂 光致发光 红外材料 |
| 收稿时间： | 1996-06-22 |
PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe |
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| CHANG YONG,CHU JUN-HAO,TANG WEN-GUO,SHEN WEN-ZHONG and TANG DING-YUAN.PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe[J].Acta Physica Sinica,1997,46(5):959-963. |
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| Authors: | CHANG YONG CHU JUN-HAO TANG WEN-GUO SHEN WEN-ZHONG and TANG DING-YUAN |
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| Abstract: | The infrared photoluminescence spectroscopy was performed for Sb-doped Hg1-xCdxTe(x≈0.38)from 3.9K to 115K. The band to band transition,localized exciton and donor acceptor pair(D0A0)related luminescence peaks were observed. The acceptor level which is related to Sb-doping and about 30 meV above the valence band was observed in photoluminescence experiment in Hg1-xCdxTe(x≈0.38). |
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