| 硫掺杂C60薄膜电学性质研究 |
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| 引用本文： | 陈光华,姚江宏,王永谦,邹云娟.硫掺杂C60薄膜电学性质研究[J].物理学报,1997,46(6):1183-1187. |
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| 作者姓名： | 陈光华 姚江宏 王永谦 邹云娟 |
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| 作者单位： | (1)北京工业大学应用物理系;兰州大学物理系; (2)兰州大学物理系 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 对硫掺杂C60薄膜样品在433K进行真空退火，并测量了其电导率随温度的变化关系．发现硫掺杂后C60薄膜的电导激活能减小，电导率显著增大．电导率随温度的变化曲线在368K到388K的范围内，存在一个电导率与温度的关系不严格遵循指数规律的过渡区，在过渡区的两侧硫掺杂的C60薄膜则表现出明显的半导体特性，这是由于在不同温度范围内样品中硫分子的结构相变所引起的
关键词：
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| 关 键 词： | 硫掺杂 碳60 电学性质 薄膜 富勒烯分子 |
| 收稿时间： | 1996-10-08 |
ELECTRICAL PROPERTIES OF SULFUR-DOPED C60 FILMS |
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| CHEN GUANG-HUA,YAO JIANG-HONG,WANG YONG-QIAN and ZOU YUN-JUAN.ELECTRICAL PROPERTIES OF SULFUR-DOPED C60 FILMS[J].Acta Physica Sinica,1997,46(6):1183-1187. |
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| Authors: | CHEN GUANG-HUA YAO JIANG-HONG WANG YONG-QIAN and ZOU YUN-JUAN |
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| Abstract: | The temperature dependencies of electrical conductivity of sulfur-doped C60 films were measured after annealing at 433K. The results showed that the conductive activation energy decreased and electrical conductivity of C60 films increased after sulfur-doping. From the logarithmic curve of the electrical conductivity versus temperature,a transition zone was seen where the conductivity did not vary with temperature exponentially;however,when above 388K or below 368K,sulfur-doped C60 films showed obvious semiconductive properties. This phenomenon is due to the phase transformation of sulfur molecules in the film. |
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