| 双栅无结晶体管阈值电压模型 |
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| 引用本文： | 杨可萌,李 悦,郭羽涵,王 超,郭宇锋,刘 陈.双栅无结晶体管阈值电压模型[J].太赫兹科学与电子信息学报,2017,15(2):313-316. |
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| 作者姓名： | 杨可萌 李 悦 郭羽涵 王 超 郭宇锋 刘 陈 |
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| 作者单位： | a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China,a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China,a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China,a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China,a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China and a.College of Electronics Science and Engineering；b.Jiangsu Provincial Engineering Laboratory of RF Integration &Micropackaging，Nanjing University of Posts and Telecommunications，Nanjing Jiangsu 210023，China |
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| 基金项目： | 教育部博士点基金资助项目(20133223110003)；江苏省自然科学基金资助项目(BK20130778)；江苏省工业支撑计划资助项目(BE2013130)；国家重点实验室基金资助项目(KFJJ201403) |
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| 摘 要： | 无结晶体管是近年来纳米SOI MOS器件领域的研究热点，相对于传统晶体管具有明显的优势。本文针对全耗尽型无结晶体管，基于二维泊松方程，建立了电势分布解析模型。根据该模型可以得到阈值电压模型。利用建立的解析模型和半导体器件仿真软件MEDICI，探讨了栅压和器件结构参数对电势分布和阈值电压的影响。该模型简单且与仿真结果吻合良好。
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| 关 键 词： | 无结晶体管 双栅 电势分布 阈值电压 |
| 收稿时间： | 2015/11/13 0:00:00 |
| 修稿时间： | 2016/1/19 0:00:00 |
Threshold voltage model for junctionless double-gate transistors |
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| YANG Kemeng,LI Yue,GUO Yuhan,WANG Chao,GUO Yufeng and LIU Chen.Threshold voltage model for junctionless double-gate transistors[J].Journal of Terahertz Science and Electronic Information Technology,2017,15(2):313-316. |
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| Authors: | YANG Kemeng LI Yue GUO Yuhan WANG Chao GUO Yufeng and LIU Chen |
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| Abstract: | Junctionless double-gate transistors which have obvious advantages over traditional junction transistors are becoming a hot topic in the field of nano Silicon-On-Insulator(SOI) devices nowadays. Based on 2-D Poisson equation, an analytical model is derived to calculate potential distribution in the channel. Based on this model, threshold voltage of the junctionless double-gate transistors can be obtained. By using this model and device simulator MEDICI, effects of gate voltage and parameters of device structure on potential distribution and threshold voltage are investigated in detail. This model is simple and has a good match with the simulation results. |
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