Facetting of the self-assembled droplet epitaxial GaAs quantum dot |
| |
| Authors: | kos Nemcsics Lajos Tth Lszl Dobos Andrea Stemmann |
| |
| Affiliation: | a Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest, Hungary;b Institute for Microelectronics and Technology, Tavaszmező u. 17, H-1084 Budapest, Hungary;c Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Jungiusstraße 11, D-20355 Hamburg, Germany |
| |
| Abstract: | In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate. Furthermore, the side of the quantum dot shows stepped facet shape. Here, we show, how the stepped side shape forms from the droplet during crystallization. The RHEED picture shows broadened chevron-tail, which can be explained by the shape of the quantum dot. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
