| A novel bit-inversion program circuit and a sourceline voltage compensation circuit for embedded NOR flash memory |
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| 作者姓名： | 张圣波 杨光军 胡剑 肖军 |
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| 基金项目： | Acknowledgement The authors wish to thank Suo Xin, Zhang Ruocheng and Liu Shu of Huahong Grace Semiconductor Manufacturing Corporation for the test program design and measurements. |
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| 摘 要： | A novel sourceline voltage compensation circuit for program operation in embedded flash memory is presented. With the sourceline voltage compensation circuit, the charge pump can modulate the output voltage according to the number of cells to be programmed with data ＂0＂. So the IR drop on the sourceline decoding path is compensated, and a stable sourceline voltage can be obtained. In order to reduce the power dissipation in program operation, a bit-inversion program circuit is adopted. By using the bit-inversion program circuit, the cells programmed to data ＂0＂ are limited to half of the bits of a write data word, thus power dissipation in program operation is greatly reduced. A 1.8-V 8 × 64-kbits embedded NOR flash memory employing the two circuits has been integrated using a GSMC 0.18-μm 4-poly 4-metal CMOS process.
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| 关 键 词： | 补偿电路 输出电压 NOR闪存 嵌入式 程序运行 编程操作 CMOS工艺 快闪记忆体 |
A novel sourceline voltage compensation circuit for embedded NOR flash memory |
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| Zhang Shengbo,Yang Guangjun,Hu Jian and Xiao Jun.A novel bit-inversion program circuit and a sourceline voltage compensation circuit for embedded NOR flash memory[J].Chinese Journal of Semiconductors,2014,35(7):075007-5. |
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| Authors: | Zhang Shengbo Yang Guangjun Hu Jian and Xiao Jun |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China |
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| Abstract: | charge pump flash memory sourceline voltage compensation circuit split-gate flash memory cell |
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| Keywords: | charge pump flash memory sourceline voltage compensation circuit split-gate flash memory cell |
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