| Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4 |
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| 引用本文： | 李鹏程,杨宏顺,李志权,柴一晟,曹烈兆.Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4[J].中国物理 B,2002,11(3):282-287. |
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| 作者姓名： | 李鹏程 杨宏顺 李志权 柴一晟 曹烈兆 |
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| 作者单位： | Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China;Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China |
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| 基金项目： | Project supported by the Major State Basic Research Development Programme of China (Grant No 19990646). |
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| 摘 要： | The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.
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| 关 键 词： | LBCO单晶 热电功率 电阻率 |
| 收稿时间： | 2001-09-12 |
Study on the in-plane electrical resistivity and thermoelectric power in single crystals of La2-xBaxCuO4 |
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| Li Peng-Cheng,Yang Hong-Shun,Li Zhi-Quan,Chai Yi-Sheng and Cao Lie-Zhao.Study on the in-plane electrical resistivity and thermoelectric power in single crystals of La2-xBaxCuO4[J].Chinese Physics B,2002,11(3):282-287. |
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| Authors: | Li Peng-Cheng Yang Hong-Shun Li Zhi-Quan Chai Yi-Sheng and Cao Lie-Zhao |
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| Affiliation: | Structure Research Laboratory, Department of Physics, University of Science and Technology of China, Hefei 230026, China |
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| Abstract: | The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text. |
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| Keywords: | resistivity thermopower |
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