Reflectivity of porous-pyramids structured silicon surface |
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Authors: | Junfeng Xiao Xiaoqiang Li Xiaodong Pi Deren Yang |
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Affiliation: | State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Zheda Road 38#, Hangzhou 310027, People's Republic of China |
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Abstract: | The antireflection of porous-pyramids structured silicon surface has been studied. The porous surface is formed by stain etching in HF/Fe(NO3)3 aqueous solution after textured in KOH/IPA solution. Reflectivity measurements show an overall reflectance of 4.2% for porous-pyramids textured silicon surface in the range from 400 to 900 nm. An optimal etching time of 30 min is obtained when both reflectivity and photo-generated carriers lifetime are considered. This technique may be probably used in the texturization process for high-efficiency silicon solar cells. |
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Keywords: | Reflectivity Porous-pyramids Texturization Silicon |
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