| LDMOS开关在不同频率下的热安全工作 |
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| 引用本文： | 李梅芝,陈星弼.LDMOS开关在不同频率下的热安全工作[J].半导体学报,2007,28(6):938-942. |
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| 作者姓名： | 李梅芝 陈星弼 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054;电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054 |
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| 摘 要： | 研究了LDMOS器件内部的最高温度与开关频率之间的关系.结果表明:在较高频率工作时,器件内部的最高温度与器件的热容、功耗、占空比和连续工作时间有关,而与器件的热阻和信号周期无关,器件会一直处于升温状态;在较低频率工作时,器件内部的最高温度还与器件的热阻和周期有关.所得结果可作为功率器件在各种频率下工作时热安全工作的参考.
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| 关 键 词： | 热安全工作 最高温度 开关频率 LDMOS 开关频率 同频率 安全工作 Different Operation Switching Safety 功率器件 信号周期 低频率 状态 升温 热阻 工作时间 连续 占空比 功耗 热容 高频率 |
| 文章编号： | 0253-4177（2007）06-0938-05 |
| 修稿时间： | 2/9/2007 3:17:47 PM |
Thermal Safety of Switching Operation of LDMOS Under Different Frequencies |
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| Li Meizhi and Chen Xingbi.Thermal Safety of Switching Operation of LDMOS Under Different Frequencies[J].Chinese Journal of Semiconductors,2007,28(6):938-942. |
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| Authors: | Li Meizhi and Chen Xingbi |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | The relation between the maximum temperature and the switching condition of an LDMOST under different frequencies is studied.The results show that the maximum temperature in the device depends on the thermal capacitance,the power dissipation,the duty cycle,and the duration of continuous operation under a high switching frequency.Under a low switching frequency,the maximum temperature depends not only on those four parameters,but also on the thermal resistance and the period of the cycle.The results given here can be used as a reference for designing the thermal safe operation conditions of power devices. |
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| Keywords: | thermal safety the maximum temperature switching frequencies |
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