B2O3对BMT微波陶瓷结构及介电性能的影响

研究了w(B2O3)=0.5%～3.0%(质量分数)对Ba(Mg1/3Ta2/3)O3(BMT)微波介质陶瓷结构和微波特性的影响。实验结果表明,B2O3掺杂可促进烧结,当w(B2O3)=1%时,BMT陶瓷致密化烧结温度降至1 200℃左右,其表观密度ρ=7.306g/cm3,相对密度达到95.7%,同时,陶瓷体系获得了良好的介电常数εr=22.08,品质因数Q.f=88 000GHz(10GHz),频率温度系数τf=3.3×10-6/℃。

Effect of B2O3 on the Structure and Dielectric Properties of BMT Microwave Ceramics

The effects of B2O3 with w=0.5% to 3.0% on the structure and microwave properties of Ba(Mg1/3Ta2/3)O3(BMT) ceramic has been investigated.It has been found that B2O3 doping can improve the BMT microwave ceramic sintering.When w(B2O3) is equal to 1%,the densification sintering temperature of BMT ceramic has been reduced to 1 200 ℃,the apparent density ρ is equal to 7 306 g/cm3,the relative density is 95.7%.The BMT microwave ceramic system has good microwave dielectric properties as follows:εr=22.08,the quality factor Q·f =88 000 GHz(10 GHz),the coefficient of frequency to temperature τf =3.3×10-6/℃.