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Spin injection in n-type resonant tunneling diodes |
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| Authors: | Vanessa Orsi Gordo Leonilson KS Herval Helder VA Galeti Yara Galv?o Gobato Maria JSP Brasil Gilmar E Marques Mohamed Henini Robert J Airey |
| Affiliation: | 1.Physics Department, Federal University of São Carlos, São Carlos 13.565-905, Brazil;2.Gleb Wataghin Physics Institute, UNICAMP, Campinas, 13083-970, Brazil;3.School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;4.Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S10 2TN, UK |
| Abstract: | We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers. |
| Keywords: | Spintronics nanostructure resonant tunneling diode photoluminescence |
