掺磷的硅中电子自旋共振

本文叙述了在室温、液N₂和液H₂及其降压温度下,利用3厘米波段双重调制波谱仪对掺磷原子浓度为～10¹⁵—～10¹⁸/厘米³的硅样品进行的电子自旋共振研究,文中还简述了低温控制系统。实验观察到传导电子、表面缺陷中心和电子-核超精细结构谱线,以及有效电子-施子核对的互作用谱线,并获得相应的g因子。在14°K下,得到施主核上电子波函数幅度的平方|Ψ(0)|²和电子-核超精细互作用常数α_D,与G.Feher在1.25°K下利用电子-核双共振方法得到的结果相近。

ELECTRON SPIN RESONANCE IN PHOSPHORUS-DOPED SILICON

In this paper we studied the electron spin resonance in phosphorus-doped silicon, at room temperature and liquid nitrogen, liquid hydrogen temperatures as well as at their temperatures of lower vapour pressure. The concentration for phosphorus impurity is of ～10¹⁵—～10¹⁸ atom/cm³. A double modulating spectrometer of 3cm band was used.In the experiments, spectral lines for conducting electrons, for surface imperfection centers and for hyperfine structure were observed. The results of experiments also showed the spectral line of interaction between effective electrons and donor nucleus pairs. The g-tactor, the square of the electronic wave function at the donor nucleus,|Ψ(0)|² , and the electron-nuclear hyperfine interaction constant a_D etc., were obtained at 14°K. Our results were approximately in agreement with those obtained by G. Feher at 1.25°K, using electron-nuclear double resonance method.