| 射频溅射CoMnNiO非晶薄膜中空穴的迁移率 |
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| 引用本文： | 陶明德,谭辉,秦东,韩英. 射频溅射CoMnNiO非晶薄膜中空穴的迁移率[J]. 半导体学报, 1990, 11(10): 786-789 |
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| 作者姓名： | 陶明德 谭辉 秦东 韩英 |
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| 作者单位： | 中国科学院新疆物理所 乌鲁木齐市(陶明德，谭辉，秦东)，中国科学院新疆物理所 乌鲁木齐市(韩英) |
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| 摘 要： | 测量薄膜的热电动势,很容易确定薄膜中载流子的迁移率。本研究根据CoMnNiO非晶薄膜在200—350K温区的热电动势测量和直流电导,计算了薄膜中空穴的迁移率。结果表明,330K时,薄膜中空穴的迁移率为1.25cm~2v~(-1)(?)~(-1),且具有热激活性质。由此可以推断,射频溅射CoMnNiO非晶薄膜在常温下发生跳跃导电。
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| 关 键 词： | CoMnNio 非晶薄膜 热电动势 迁移率 |
Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering |
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| Tao Mingde/Xinjiang Institute of Physics,Academia Sinica,UrumqiTan Hui/Xinjiang Institute of Physics,Academia Sinica,UrumqiQin Dong/Xinjiang Institute of Physics,Academia Sinica,UrumqiHan Ying/Xinjiang Institute of Physics,Academia Sinica,Urumqi. Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering[J]. Chinese Journal of Semiconductors, 1990, 11(10): 786-789 |
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| Authors: | Tao Mingde/Xinjiang Institute of Physics Academia Sinica UrumqiTan Hui/Xinjiang Institute of Physics Academia Sinica UrumqiQin Dong/Xinjiang Institute of Physics Academia Sinica UrumqiHan Ying/Xinjiang Institute of Physics Academia Sinica Urumqi |
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| Abstract: | The mobility of holes in amorphous CoMnNiO film is calculated from the measurementof do conductivity and thermo-emf of the film in the temperature range of 200-300 K. Theresults show that the mobility of holes at 330 K is of 1.25cm~2v~(-1)s~(-1)and thermally activated. It isconcluded that band tail hopping conduction in amorphous CoMnNiO film will occur at 300 K. |
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| Keywords: | Amorphous Film Thermopower Mobility |
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