Effect of conduction-band discontinuity on lasing characteristicsof 1.5 μm InGaAs/In(Ga)AlAs MQW-FP lasers |
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| Authors: | Wakatsuki A Kawamura Y Noguchi Y Iwamura H |
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| Affiliation: | NTT Opto-Electron. Lab., Kanagawa; |
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| Abstract: | The characteristic temperature (T0), relaxation frequency (fr), differential gain (dg /dn) and nonlinear gain coefficient (ϵ) of 1.5-μm InGaAs/In(Ga)AlAs multiple-quantum-well (MQW) Fabry-Perot (FP) lasers grown by gas source molecular beam epitaxy (GSMBE) are reported. It is found that T0 is little affected by the difference in the conduction band discontinuity. A maximum T0 value of 86 K is obtained. The dg/dn and ϵ∈ were calculated from the slope of the fr versus √ power plot and the damping K-factor. It is demonstrated that dg/dn and ϵ of InGaAs/In(Ga)AlAs MQW lasers increase with an increase in the conduction band discontinuity |
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