| 低温下硅的光伏效应(英文) |
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| 引用本文： | 廖英豪,颜永美,刘士毅. 低温下硅的光伏效应(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 廖英豪 颜永美 刘士毅 |
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| 作者单位： | 厦门大学(廖英豪，颜永美)，厦门大学(刘士毅) |
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| 摘 要： | <正> We diffused gold into Si wafers of good quality (Ln≥324μm) and obtained 6 samples with NAa = 7.94×1012 -6.96×1015cm-3. The minority carrier lifetime of each sample was measured with the photovoltage method and compareed with the calculated value, showing that maximum deviation is 4 times between them.
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Photovoltage Effects of Si at Low Temperature |
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