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Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T
Authors:Koji Yamada   Noboru Miura   Chihiro Hamaguchi  Norihiko Kamata
Affiliation:

* Institute for Solid State Physics, University of Tokyo, Roppongi, Minatoku, Tokyo 106, Japan

** Department of Electronics, Osaka University, Yamada-Oka, Suita, Osaka 565, Japan

*** Department of Electronics, Saitama University, Shimo-Ohkubo, Urawa, Saitama 338, Japan

Abstract:Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.
Keywords:Magnetophonon resonance   N-type Si   Inter-valley transitions   High electric field effect   Short channel InP   Extremum sign reversal   P-type InSb
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