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Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer |
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| Authors: | Antipov V V Kukushkin S A Osipov A V |
| Affiliation: | 1.Institute of Problems of Machine Engineering, Russian Academy of Sciences, Bolshoi pr. 61, St. Petersburg, 199178, Russia ;2.Saint-Petersburg State Institute of Technology (Technical University), Moskovskii pr. 26, St. Petersburg, 190013, Russia ;3.Saint-Petersburg National Research University of Information Technologies, Mechanics, and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia ;4.Peter the Great Saint-Petersburg State Polytechnic University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia ; |
| Abstract: | An epitaxial 1–3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality ~100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase. |
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