Single-atom microscopy in wide-bandgap nitrides

Wide bandgap III-nitrides, such as cubic boron nitride and wurtzite-type aluminum nitride, are promising systems for optoelectronics. To extend their luminescent properties, we doped single Ce atoms into III-nitride single crystals using reactive flux with a temperature gradient method at high-pressure and high-temperature conditions. To fully understand such properties in a large size-mismatch system, it is critically important to determine the point-defect structures of single dopants, their spatial distribution in three dimensions, and their atomistic dynamics at an atomic level. This review discusses point defect structures and their dynamics in III-nitrides using single-atom-sensitive scanning transmission electron microscopy, and the recent progress in the related field of electron microscopy.