Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4 |
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| Affiliation: | 1. Department of Physics, Hokkaido University, Sapporo 060-0810, Japan;2. Department of Physics, Meiji University, Kawasaki 214-8571, Japan;3. Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan;1. Depto Electricidad y Electrónica, Universidad del País Vasco UPV/EHU, 48940 Leioa, Spain;2. Ural Federal University, Institute of Natural Sciences, 620002 Ekaterinburg, Russia;3. Institute of Electrophysics UD RAS, 620016 Ekaterinburg, Russia;4. Department of Physics, University of Maryland, College Park, MD 20742, USA;5. Advanced Research Facilities (SGIKER), Universidad del País Vasco UPV/EHU, 48080 Bilbao, Spain;1. G.V. Kurdyumov Institute for Metal Physics, NASU, Vernadsky Blvd., 36, Kyiv 03680, Ukraine;2. National Scientific Center, Kharkov Institute for Physics and Technology, NASU, Academicheskaja, 1, Kharkov 61108, Ukraine;1. Faculty of Physics, Lomonosov Moscow State University, 119991, Leninskie gory 1, Moscow, Russia;2. Voronezh State Technical University, 394026, Moscow ave. 14, Voronezh, Russia |
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| Abstract: | We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd5(Si0.1Ge0.9)4. The resistivity changes drastically at the magnetostructural first-order transition (TC≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above TC, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd5(SixGe1−x)4 with x⩽0.5 by simply adjusting the Si : Ge ratio. |
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