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Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules |
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| Authors: | L E Vorob’ev V Yu Panevin N K Fedosov D A Firsov V A Shalygin A A Andreev Yu B Samsonenko A A Tonkikh G E Cirlin N V Kryzhanovskaya V M Ustinov S Hanna A Seilmeier N D Zakharov P Werner |
| Affiliation: | (1) St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia;(2) Department of Physics, University of Surrey, Guildford, GU2 7XH, UK;(3) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(4) Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 198103, Russia;(5) Institute of Physics, University of Bayreuth, Germany;(6) Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany |
| Abstract: | Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been calculated for different polarizations of light, and a good agreement with the experimental data is obtained. It is shown that the intraband absorption of light by electrons strongly exceeds the absorption by holes. Photoluminescence spectra and TEM images of structures with artificial molecules formed by pairs of QDs were studied. |
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