| 用椭圆偏振测量法分析碲镉汞的组分及其均匀性 |
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| 引用本文： | 黄仕华,蔡毅,钱晓凡,陈永安. 用椭圆偏振测量法分析碲镉汞的组分及其均匀性[J]. 半导体光电, 2001, 22(3): 224-226 |
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| 作者姓名： | 黄仕华 蔡毅 钱晓凡 陈永安 |
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| 作者单位： | 1. 昆明理工大学理学院,
2. 昆明物理研究所, |
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| 基金项目： | 云南工业大学校科研和教改项目;98010; |
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| 摘 要： | 简略介绍了椭偏仪的测量原理和测量装置。分析了Hg1-xCdxTe(MCT)的 组分与椭偏仪的参数Δ和ψ之间的关系，结果发现碲镉汞的组分x主要与椭偏仪的参数ψ有关，而且x与ψ的经验关系为ψ＝14．84－10.22x。最后椭圆偏振测量的方法分析了碲镉汞的横向和纵向组分均匀性。该方法具有非破坏性、有效、快捷的特点。
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| 关 键 词： | 椭圆偏振测量 碲镉汞 组分均匀性 半导体材料 |
| 文章编号： | 1001-5868(2001)03-0224-03 |
| 修稿时间： | 2000-09-11 |
Analysis on Composition and Uniformity of HgCdTe by Ellipsometry |
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| HUANG Shi-hua,CAI Yi,QIAN Xiao-fan,CHEN Yong-an. Analysis on Composition and Uniformity of HgCdTe by Ellipsometry[J]. Semiconductor Optoelectronics, 2001, 22(3): 224-226 |
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| Authors: | HUANG Shi-hua CAI Yi QIAN Xiao-fan CHEN Yong-an |
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| Affiliation: | HUANG Shi-hua1,CAI Yi2,QIAN Xiao-fan1,CHEN Yong-an1 |
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| Abstract: | Principle of ellipsometric measurement is presented and ellipsometry is briefly described, followed by analysis on the relationship between the composition of HgCdTe and the ellipsometric parameters ( ψ and Δ). It is found that the ellipsometric parameter ψ is chiefly correlated with composition x, and x has an approximately linear relationship to ψ . Finally, the transverse and longitudinal compositional uniformity of HgCdTe is analyzed by ellipsometric measurement which is a nondestructive, effective and rapid analytic method. |
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| Keywords: | ellipsometric measurement HgCdTe compositional uniformity |
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