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UHVCVD SiGe外延设备真空腔室及自动传输系统设计
引用本文:王慧勇,魏唯,宁宗娥.UHVCVD SiGe外延设备真空腔室及自动传输系统设计[J].电子工业专用设备,2013,42(4):9-11,33.
作者姓名:王慧勇  魏唯  宁宗娥
作者单位:中国电子科技集团公司第四十八研究所,湖南长沙,410111
摘    要:介绍了UHVCVD SiGe外延设备真空腔室及自动传输系统的具体设计,通过合理选取预备室和反应室的真空泵组,满足了设备的超高真空要求,自动传输系统则保证了反应室高洁净环境、提高外延生产效率。

关 键 词:自动传输系统  预备室  反应室  超高真空

Vacuum Chamber and Automatic Transfer System of UHVCVD for SiGe Epitaxial Growth
WANG Huiyong , WEI Wei , NING Zonge.Vacuum Chamber and Automatic Transfer System of UHVCVD for SiGe Epitaxial Growth[J].Equipment for Electronic Products Marufacturing,2013,42(4):9-11,33.
Authors:WANG Huiyong  WEI Wei  NING Zonge
Affiliation:(The 48thResearch Institute of CETC,Changsha 410111,China)
Abstract:The design of vacuum chamber and wafer automatic transfer system of UHVCVD SiGe epitaxital growth equipment are presented in this paper. An ultra high vacuum can be achieved by correctly choose a group of vacuum pumps of the loadlock chamber and the reaction chamber. The automatic transfer system could ensure a very clean environment in the reaction chamber and improve the production efficiency of SiGe epitalxial growth.
Keywords:Automatic transfer system  Loadlock chamber  Reaction chamber  Ultra High Vacuum
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