Comprehensive study on a novel bidirectional tunnelingprogram/erase NOR-type (BiNOR) 3-D flash memory cell |
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| Authors: | Hsiu-Fen Chou A Ching-Song Yang E Cheng-Jye Liu Hsiu-Hsiang Pong Ming-Chi Liaw Ten-Sen Chao Ya-Chin King Huey-Liang Hwang Ching-Hsiang Hsu C |
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| Affiliation: | Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu; |
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| Abstract: | In this paper a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for both program and erase operations in NOR-type array architecture to facilitate low power applications. The BiNOR flash memory guarantees excellent tunnel oxide reliability and is provided with fast random access capability. Furthermore, a three-dimensional (3D) current path in addition to the conventional two-dimensional (2D) conduction is proven to improve the read performance. The BiNOR flash memory is thus promising for low-power, high-speed, and high-reliability nonvolatile memory applications |
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