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An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures |
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| Authors: | M M Zverev N A Gamov D V Peregoudov V B Studionov E V Zdanova I V Sedova S V Gronin S V Sorokin S V Ivanov P S Kop’ev |
| Affiliation: | (1) Moscow State Institute of Radio Engineering, Electronics, and Automation, Moscow, 119454, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
| Abstract: | Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV. |
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