| Fe/(Ga,Mn)As异质结的界面结构和磁性质 |
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| 引用本文： | 邓加军,陈培,王文杰,胡冰,车剑韬,陈林,王海龙,赵建华.Fe/(Ga,Mn)As异质结的界面结构和磁性质[J].半导体学报,2013,34(8):083003-4. |
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| 作者姓名： | 邓加军 陈培 王文杰 胡冰 车剑韬 陈林 王海龙 赵建华 |
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| 作者单位： | Mathematics and Physics Department,North China Electric Power University;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences |
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| 基金项目： | 国家自然科学基金；中央高校基本科研业务费专项资金 |
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| 摘 要： | Fe/（Ga,Mn）As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and（Ga, Mn）As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe2As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin（Ga,Mn）As region near the interface of the Fe/（Ga,Mn）As heterostructure.
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| 关 键 词： | heterostructures magnetic semiconductor ferromagnetic metal molecular-beam epitaxy |
The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures |
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| Deng Jiajun,Chen Pei,Wang Wenjie,Hu Bing,Che Jiantao,Chen Lin,Wang Hailong and Zhao Jianhua.The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures[J].Chinese Journal of Semiconductors,2013,34(8):083003-4. |
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| Authors: | Deng Jiajun Chen Pei Wang Wenjie Hu Bing Che Jiantao Chen Lin Wang Hailong and Zhao Jianhua |
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| Affiliation: | Mathematics and Physics Department, North China Electric Power University, Beijing 102206, China;Mathematics and Physics Department, North China Electric Power University, Beijing 102206, China;Mathematics and Physics Department, North China Electric Power University, Beijing 102206, China;Mathematics and Physics Department, North China Electric Power University, Beijing 102206, China;Mathematics and Physics Department, North China Electric Power University, Beijing 102206, China;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Fe/(Ga, Mn)As heterostructures were fabricated by all molecular-beam epitaxy. Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface. The different magnetic behavior between the Fe layer and (Ga, Mn)As layer is observed by superconducting quantum interference device magnetometry. X-ray photoelectron spectroscopy measurements indicate no Fe2As and Fe-Ga-As compounds, i.e., no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin (Ga, Mn)As region near the interface of the Fe/(Ga, Mn)As heterostructure. |
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| Keywords: | heterostructures magnetic semiconductor ferromagnetic metal molecular-beam epitaxy |
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