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Study of band offsets in InN/Ge heterojunctions |
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| Authors: | Mahesh Kumar Thirumaleshwara N Bhat Mohana K Rajpalke Basanta Roul Neeraj Sinha AT Kalghatgi SB Krupanidhi |
| Affiliation: | 1. Materials Research Centre, Indian Institute of Science, Bangalore-560012, India;2. Central Research Laboratory, Bharat Electronics, Bangalore-560013, India;3. Office of Principal Scientific Advisor, Government of India, New Delhi-110011, India |
| Abstract: | InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 ± 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of ~ 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. |
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