InGaAs vertical-cavity surface-emitting lasers |
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Authors: | Geels RS Corzine SW Coldren LA |
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Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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Abstract: | The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs VCSELs. A simple method to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors is introduced. The theoretical predictions are compared to results from actual device measurements. A novel technique is introduced to determine material parameters: fabrication of in-plane lasers from VCSEL material. The procedure used to determine the optical mode in such an in-plane laser is described. Using the insight gained from modeling, the external efficiency was increased to >30% with a threshold current density of 1 kA/cm2 |
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