Comparative studies of Ge and Si p-channel metal-oxide-semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Ge and Si p-channel metal--oxide--semiconductorfield-effect-transistors (p-MOSFETs) with hafnium silicon oxynitride(HfSiON) gate dielectric and tantalum nitride (TaN) metal gate arefabricated. Self-isolated ring-type transistor structures with twomasks are employed. W/TaN metal stacks are used as gate electrodeand shadow masks of source/drain implantation separately.Capacitance--voltage curve hysteresis of Ge metal--oxide--semiconductor(MOS) capacitors may be caused by charge trapping centres inGeO$_{x}$ ($1