Characterization of surface-undoped In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobilitytransistors

High-performance 0.3-μm-gate-length surface-undoped In_0.52 Al_0.48As/In_0.53Ga_0.47As/InP high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) have been characterized and compared with a surface-doped structure. At 18 GHz, the surface-undoped HEMT has achieved a maximum stable gain (MSG) of 19.2 dB compared to 16.0 dB for the surface-doped structure. The higher MSG value of the surface-undoped HEMTs is obtained due to the improved g_m/g₀ ratio associated with the surface-induced electric field spreading effect. Comparison of identical 0.3-×150-μm-gate devices fabricated on surface-undoped and -doped structures has shown greatly improved gate leakage characteristics and much lower output conductance for the surface-undoped structure. It is demonstrated that the surface potential, modulated by different surface layer designs, affects the charge control in the conducting channel, especially the carrier injection into the buffer, resulting in excess output conductance. Several millimeter-wave coplanar waveguide (CPW) monolithic distributed amplifiers have been successfully fabricated by using the surface-undoped HEMT structure. A high gain per stage distributed amplifier with 170-dB±1-dB small-signal gain across a frequency band of 24-40 GHz, a W-band monolithic integrated circuit with 6.4-dB gain at 94 GHz, and a broad bandwidth distributed amplifier with 5-dB gain across a frequency band of 5 to 100 GHz have been demonstrated by using the surface-undoped structures