Tailoring structural and electrical properties of A-site nonstoichiometric Na0.5Bi0.5(Ti0.97Ni0.03)O3 ferroelectric films deposited on LaNiO3(100)/Si substrate |
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Authors: | Yongling Ding Aiqin Zhang Yanmin Wang Deming Wang Qian Yao Changhong Yang Panpan Lv Huadong Sun |
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Affiliation: | 1. School of Transportation Civil Engineering, Shandong Jiaotong University, Jinan 250357, China;2. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China |
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Abstract: | Highly (l00)-oriented Ni-doped Na0.5Bi0.5TiO3 (NBTNi) thin films with different A-site cation nonstoichiometry were deposited on the LaNiO3 (100)/Si substrates. We find that low levels of Na/Bi nonstoichiometry in the original composition of NBTNi films have obvious influence on the crystal structure and ferro-/dielectric properties. Na deficiency or Bi excess can lower the leakage current compared to the stoichiometric sample due to the decreased oxide-site vacancies. However, the mechanisms for the two types of films are different. That is, the mobile oxygen vacancies are tied by the Na vacancies in Na deficiency film whereas the formation of oxygen vacancies is suppressed for Bi-rich film. A good combination of ferroelectric property (Pr = 22.7?μC/cm2) and dielectric property (εr = 360 and tan?δ?=?0.11) can be achieved in Bi-rich NBTNi (Na0.5Bi0.54TNi) film. Besides, the effect of voltage and frequency on the capacitance and dielectric tunability for the Na0.5Bi0.54TNi film is investigated solely. These results show that NBT-based thin film is quite flexible in A-site nonstoichiometry, which provides a broad space for performance improvement. |
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Keywords: | Nonstoichiometry Structure Electrical property Thin film |
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