Dopant induced RTFM and enhancement of fluorescence efficiencies in spintronic ZnS:Ni nanoparticles |
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| Authors: | B Poornaprakash S Sambasivam D Amaranatha Reddy G Murali RP Vijayalakshmi BK Reddy |
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| Affiliation: | 1. Department of Physics, Sri Venkateswara University, Tirupati 517502, India;2. Department of Physics, Pukyong National University, Busan, South Korea;3. Department of Physics, Hankuk University of foreign studies, Yongin, Korea |
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| Abstract: | Diluted magnetic semiconducting (DMS) ZnS:Ni (Ni=0, 1, 3 and 5 at%) nanoparticles were synthesized by the refluxing technique at 80 °C. X-ray diffraction studies showed that undoped ZnS and Ni doped ZnS nanoparticles exhibited the expected zinc blende structure. X-ray photoelectron spectroscopy results revealed that the Ni ions existed in a +2 state in these nanoparticles. Reflectance measurements showed a decrease in band gap with increasing Ni concentration. Room temperature photoluminescence (PL) studies indicated that all the samples exhibited broad and asymmetric PL peaks covering a wide visible range. Gaussian fitting of PL data resulted in three deconvoluted peaks corresponding to blue and green emissions. Dramatic enhancement in fluorescence efficiency was observed in the doped ZnS nanoparticles indicating their possible applications in photoluminescent devices. Magnetic studies revealed that all the doped samples exhibited carrier mediated ferromagnetism at room temperature. Saturation magnetization (Ms) increased with increasing Ni content reaching a maximum for 3 at% Ni and decreased for samples of 5 at% Ni. |
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| Keywords: | Nanoparticles Photoluminescence Room temperature ferromagnetism |
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