| 全耗尽SOI MOSFET及CMOS／SOI电路的研究 |
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| 引用本文： | 刘永光.全耗尽SOI MOSFET及CMOS／SOI电路的研究[J].微电子学,1996,26(3):143-145. |
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| 作者姓名： | 刘永光 |
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| 作者单位： | 电子工业部第２４研究所 |
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| 摘 要： | 采用ＳＩＭＯＸ材料，研制了一种全耗尽ＣＭＯＳ／ＳＯＩ模拟开关电路，研究了全耗尽ＳＯＩ ＭＯＳ场效应晶体管的阈值电压与背栅偏置的依赖关系，对漏源击穿的Ｓｎａｐｂａｃｋ特性进行分析，介绍了薄层ＣＭＯＳ／ＳＩＭＯＸ制作工艺，给出了全耗尽ＣＭＯＳ／ＳＯＩ电路的测试结果。
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| 关 键 词： | 半导体材料 半导体器件 SOI MOSFET 模拟开关 |
Fabrication of Fully Depleted SOI MOSFET'S and CMOS/SOI IC's |
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| ZHANG Zhengfan and LIU Yongguang.Fabrication of Fully Depleted SOI MOSFET'S and CMOS/SOI IC's[J].Microelectronics,1996,26(3):143-145. |
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| Authors: | ZHANG Zhengfan and LIU Yongguang |
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| Affiliation: | Sichuan Institute of Solid-State Circuits; Chongqing; Sichuan 630060 |
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| Abstract: | Fully depleted SOI MOSFET's were fabricated using SIMOX and a CMOS/SOI analog switch was made based on SOI/MOSFET' s. The dependence of threshold voltage of fully depleted SOI MOSFET's on the back-gate bias was investigated. The snapback of drain-source breakdown was characterized. The thin CMOS/SIMOX process is brifly introduced' Test results of the developed fully depleted CMOS/SOI circuit are given. |
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| Keywords: | Semiconductor material Semiconductor device SOI MOSFET Analog switch |
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