| 复合钝化多晶硅纳米膜应力分布仿真分析 |
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| 引用本文： | 揣荣岩,张大为,孙显龙,刘斌,李新. 复合钝化多晶硅纳米膜应力分布仿真分析[J]. 仪表技术与传感器, 2009, 0(Z1) |
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| 作者姓名： | 揣荣岩 张大为 孙显龙 刘斌 李新 |
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| 作者单位： | 沈阳工业大学信息科学与工程学院,辽宁沈阳,110178 |
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| 基金项目： | 辽宁省科学技术基金资助项目，辽宁省教育厅项目 |
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| 摘 要： | 多晶硅纳米薄膜具有优良的压阻特性,为提高其在传感器应用中的稳定性和可靠性,对这种薄膜的钝化层结构进行了研究.基于压力传感芯片的结构特点,建立了钝化层结构的有限元分析分析模型,给出了应力分布与SiO_2和Si_3N_4钝化层结构之间关系.结果表明:采用Si_3N_4-SiO_2-Si_3N_4复合钝化结构,适当控制各结构层厚度可有效降低热失配引起的内应力.从而给出了降低薄膜内应力的钝化方法,为多晶硅纳米薄膜在压阻式传感器上的应用提供了必要的技术支持.
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| 关 键 词： | 多晶硅纳米薄膜 钝化 应力分布 有限元 压力传感器 |
Simulatiom Analysis of Stress Distribution in Polysilicon Nanofilms of Compound Passivation |
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| CHUAI Rong-yan,ZHANG Da-wei,SUN Xian-long,LIU Bin,LI Xin. Simulatiom Analysis of Stress Distribution in Polysilicon Nanofilms of Compound Passivation[J]. Instrument Technique and Sensor, 2009, 0(Z1) |
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| Authors: | CHUAI Rong-yan ZHANG Da-wei SUN Xian-long LIU Bin LI Xin |
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| Abstract: | In order to improve stability and reliability of polysilicon nanofilms with favourable piezoresistive properties applied in some sensors,the passivation structure of the nanofilms were studied.Based on the structure of general press sensor chips,the models of finite element analysis were set up for the passivation structure,and then the influence of SiO_2 and Si_3N_4 passivation structure was shown on the stress distribution.The conclusion was indicated that using Si_3N_4-SiO_2-Si3N_4 compound passivation structure,the internal stress caused by thermal dilation mismatch could be reduced availably in virtue of reasonable manipulation of passivation thickness.Consequently,the passivation method of polysilicon nano-film were given to reduce stress within the film,which provided necessary technical support for the application of the nanofilms in strain sensors. |
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| Keywords: | polysilicon nano-films passivation stress distribution finite-element pressure sensor |
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