| (GaAl)As/GaAs质子轰击隔离条形DH激光器的退化原因 |
| |
| 引用本文： | 庄婉如,杨培生,高季林,马英棣.(GaAl)As/GaAs质子轰击隔离条形DH激光器的退化原因[J].中国激光,1983,10(6):331-333. |
| |
| 作者姓名： | 庄婉如 杨培生 高季林 马英棣 |
| |
| 作者单位： | 中国科学院半导体所
(庄婉如，杨培生，高季林)，中国科学院半导体所(马英棣) |
| |
| 摘 要： | 对研制的(GaAl)As/GaAs质子轰击隔离条形DH激光器的退化原因进行了实验分析。结果表明:快退化主要起因于有源区内的暗点、暗线及暗区等缺陷的增殖;腔面氧化是限制寿命在千小时的原因之一;质子轰击引入的点缺陷移入有源区是器件限制寿命在万小时的原因之一。
|
| 收稿时间： | 1982/8/2 |
Causes for degradation of isolated stripe (GaAl) As/GaAs DH lasers by proton bombardment |
| |
| Abstract: | We have investigated experimentally the causes for degradation of the isolated stripe CW(GaAl)As/GaAs DH lasers by proton bombardment. The results of ageing tests show that the fast degraded lasers are caused by defects (such as dark spot, dark line and dark region) in the active region extendeing rapidly during the test process. One of the factors limiting the lifetime to 103 hours is the oxidization of the mirror facet of laser cavity; and the moving of mierodefects by proton bombardment into the active region becomes one of the reasons limiting the lifetime to 104 hours. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
