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一种Q值高且可独立调节的新型宽带有源电感
引用本文:黄建程,张万荣,谢红云,金冬月,董小乔,王家宁. 一种Q值高且可独立调节的新型宽带有源电感[J]. 微电子学, 2018, 48(6): 825-829
作者姓名:黄建程  张万荣  谢红云  金冬月  董小乔  王家宁
作者单位:北京工业大学 信息学部 微电子学院, 北京 100124,北京工业大学 信息学部 微电子学院, 北京 100124,北京工业大学 信息学部 微电子学院, 北京 100124,北京工业大学 信息学部 微电子学院, 北京 100124,北京工业大学 信息学部 微电子学院, 北京 100124,北京工业大学 信息学部 微电子学院, 北京 100124
基金项目:国家自然科学基金资助项目(61774012,61574010);北京市自然科学基金资助项目(4142007,4143059); 北京市未来芯片技术高精尖创新中心科研基金资助项目(KYJJ2016008)
摘    要:基于回转器原理,提出了一种可在较宽频带内工作、具有大电感值和高Q值、Q值相对于电感值可以独立调节的新型有源电感。在回转器的负跨导器中,引入了调制MOS管。一方面,增加了一个新的回转通路,进而增加了回转次数,实现了大电感值。另一方面,创建了一个反馈支路,减小了等效串联电阻,实现了高Q值。将为正跨导器提供偏置的电流源与负跨导器交叉耦合连接,形成负阻结构,增大了等效并联电阻,进一步提高Q值。在有源电感的输入端串接小尺寸MOS管,减小了等效输入电容,实现了高的谐振频率和宽的工作频带。对有源电感进行验证,结果表明,Q峰值可高达1 996,电感峰值可高达54 nH,工作频带为0~12 GHz。协同调节有源电感的两个外部偏置电压时,实现了Q值相对于电感值的独立调节。Q值峰值从52到995大幅度变化时,电感峰值的变化幅度仅为5.3%。

关 键 词:有源电感   宽频带   独立调节
收稿时间:2018-01-08

A Wideband Active Inductor with High Q Value and Q Value Independent Adjustment
HUANG Jiancheng,ZHANG Wanrong,XIE Hongyun,JIN Dongyue,DONG Xiaoqiao and WANG Jianing. A Wideband Active Inductor with High Q Value and Q Value Independent Adjustment[J]. Microelectronics, 2018, 48(6): 825-829
Authors:HUANG Jiancheng  ZHANG Wanrong  XIE Hongyun  JIN Dongyue  DONG Xiaoqiao  WANG Jianing
Affiliation:College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China,College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China,College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China,College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China,College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China and College of Microelec., Faculty of Inform. Technol., Beijing Univ. of Technology, Beijing 100124, P. R. China
Abstract:Based on gyrator principle, a novel active inductor was presented with wide frequency band, large inductance value, high Q value and the Q value independent adjustment relative to the inductance value. A modulation MOS transistor was introduced into the negative transconductor. On the one hand, a new gyration path was created to increase the number of gyration and hence realize the large inductance value. On the other hand, it formed a feedback branch to reduce the equivalent series resistance and achieve high Q value. The bias current source used in the positive transconductor was cross-coupling connected with the negative transconductor to form a negative resistance structure, so as to increase the equivalent parallel resistance and improve the Q value. At the input of active inductor, small size MOS transistors were added in series to reduce the equivalent input capacitance, therefore realize high resonant frequency and wide operation frequency band. The verification results of active inductor showed that the peak value of Q was high up to 1 996, the peak value of inductance could reach as large as 54 nH, and the range of operation frequency was 0~12 GHz. When the two external bias voltage of the active inductor were tuned in a coordinated style, the peak Q value could be adjusted significantly between 52~995, whereas the variation of the peak inductance value was only 5.3%.
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