Microwave pnp AlGaAs/GaAs heterojunction bipolartransistor |
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Authors: | Bayraktaroglu B. Camilleri N. Lambert S.A. |
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Affiliation: | Texas Instrum. Inc., Dallas, TX; |
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Abstract: | The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated for the first time. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100 nm thick base layers and self-aligned emitter-base contacts. ft and fmax values were 12 and 20 GHz respectively. Under common-base configuration, 8 dB gain was obtained at 10 GHz. Device performance was characterised under CW and pulsed conditions |
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