偏压对离子源辅助HiPIMS制备纳米TiN薄膜力学性能和耐蚀性能的影响

为提高磁控溅射制备薄膜的致密度，减少结构缺陷，研究薄膜显微结构对硬度、韧性及耐蚀性能的影响，尝试在改变离子源和基材偏压的条件下，采用离子源辅助HiPMIS技术在304不锈钢和P型（100）晶向硅片上制备TiN纳米薄膜。采用扫描电子显微镜、小角X射线衍射仪对薄膜的形貌和晶体结构进行分析；采用纳米压痕仪和维氏硬度计分别测量计算薄膜的硬度和韧性，并通过电化学工作站对薄膜的耐蚀性能进行检测。结果表明：随着偏压的增加以及离子源的引入，离子的轰击效应增强，薄膜的沉积速率下降，致密度增加。偏压为-200 V时，薄膜的硬度达到最大值16.2 GPa，且对应的晶粒尺寸最小，（111）晶面衍射峰的强度最高。离子源的加入使所制备薄膜的硬度略有下降。此外，随着偏压的增加，薄膜的韧性和耐腐蚀性能也有一定提高。

Effects of Bias Voltage on Mechanical Properties and Corrosion Resistance of TiN Nanostructure Films Prepared by Ion Source Assisted HiPIMS

To improve the density and reduce the structural defects of the films prepared by magnetron sputtering, TiN nanostructure films were deposited on 304 stainless steel and P-type (100) crystal silicon wafers by ion source assisted HiPMIS technology with different ion source and substrate bias voltage to investigate the effect of film microstructure on the hardness, toughness and corrosion resistance. The morphology and crystal structure of the films were analyzed by SEM and GIXRD. Hardness and toughness of the film were measured with nanoindentation measurement and Vickers. The corrosion resistance was measured by electrochemical workstation. The results show that the bombardment effect increases with the increase of the substrate bias voltage and the utilization of ion source, which leads to a decrease in the deposition rates of the films and an increase in film density. When the substrate bias voltage is -200 V, the hardness reaches a maximum of 16.2 GPa, the corresponding grain size is the smallest, and the corresponding (111) crystal surface peak has the highest strength. The hardness of the film decreases slightly with the utilization of ion source. Additionally, the toughness and corrosion resistance of the films are also improved with the increase of the substrate bias voltage