砷化镓上生长金刚石薄膜的研究

以CH4和H2为气源,用微波辅助等离子体装置,在10.0 mm×7.0 mm的砷化镓基底上沉积了CVD金刚石薄膜,用扫描电子显微镜观察沉积效果,拉曼光谱表征沉积质量,分析薄膜附着力与砷化镓材料性能的关系。结果表明,当基体温度为600℃,气压为5 kPa,甲烷浓度为2.0%时,在砷化镓片表面上沉积出了CVD金刚石薄膜,晶粒尺寸均匀,晶形完整、规则,晶界非常清晰。

Deposition of CVD diamond films on GaAs

(100)Texture diamond thin film has been deposited on to 10.0 mm×7.0 mm GaAs substrate by using CH4/H2 gas system by the method of microwave plasma chemical vapor deposition(MPCVD).The surface morphologies and quality of samples are observed with SEM and Raman spectrum respectively.And then analyse the relationship between adhesion of thin film and properties of GaAs.The experimental results show that when the substrate temperature is 600 ℃,deposition pressure is 5 kPa and the methane concentration is 2.0%,the CVD diamond thin film has been deposited on to GaAs substrate.