Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells |
| |
| Authors: | Z Chen N Fichtenbaum D Brown S Keller UK Mishra SP Denbaars S Nakamura |
| |
| Affiliation: | (1) Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA;(2) Materials Department, University of California, Santa Barbara, CA 93106, USA |
| |
| Abstract: | In this report, the influence of magnesium doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) was investigated
by means of atomic force microscopy (AFM), photoluminescence (PL), and X-ray diffraction (XRD). Five-period InGaN/GaN MQWs
with different magnesium doping levels were grown by metalorganic chemical vapor deposition. The AFM measurements indicated
that magnesium doping led to a smoother surface morphology. The V-defect density was observed to decrease with increasing
magnesium doping concentration from ∼109 cm−2 (no doping) to ∼106 cm−2 (Cp2Mg: 0.04 sccm) and further to 0 (Cp2 Mg: 0.2 sccm). The PL measurements showed that magnesium doping resulted in stronger emission, which can be attributed to
the screening of the polarization-induced band bending. XRD revealed that magnesium doping had no measurable effect on the
indium composition and growth rate of the MQWs. These results suggest that magnesium doping in MQWs might improve the optical
properties of GaN photonic devices. |
| |
| Keywords: | InGaN multiple quantum wells (MQWs) V-defects metalorganic chemical vapor deposition (MOCVD) photoluminescence (PL) atomic force microscopy (AFM) |
| 本文献已被 SpringerLink 等数据库收录！ |
|
