Fabrication and characterization of a PbTe quantum dots multilayer structure |
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| Authors: | E Rodriguez E Jimenez GJ Jacob AAR Neves CL Cesar LC Barbosa |
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| Affiliation: | Department of Quantum Electronics, Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, PO Box 6165, CEP 13084-970, SP, Brazil |
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| Abstract: | Multilayer PbTe quantum dots (QDs) and SiO2 were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region. |
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| Keywords: | Pulsed laser deposition Pecvd Semiconductor quantum dots |
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