以CBP为主体的高色纯度红色磷光有机电致发光器件

以铱配合物红色磷光体Ir(piq)2(acac)为掺杂剂,制备了基于CBP材料的一系列红色电致磷光器件(PLED),其结构为ITO/CuPC(1nm)/Ir(piq)2(acac):CBP(25nm)/BCP(10nm)/Alq3(35nm)/LiF(1nm)/Al(100nm),对4种不同的掺杂剂浓度进行了比较,研究了它们的电致发光特性。得出了Ir(piq)2(acac)的最佳掺杂比为8%,此时器件的色坐标都非常接近标准红色,且色纯度超过了98%以上;在16V时,色坐标为(x=0.67,y=0.32),色纯度为99.74%,基本满足了全色显示对红色发光的要求。

Highly Color-purified-red Phosphorescent Organic Light-emitting Diode Using CBP as Host Material

In this report, devices using red phosphorescence dye Ir (piq)_2(acac) as dopant and CBP as host are fabricated. The structure of the device is ITO/CuPC(1 nm)/Ir (piq)_2(acac)CBP(25 nm)/BCP (10 nm)/Alq_3(35 nm)/LiF(1 nm)/Al(100 nm). Comparing with 4 kinds of different dopant concentration, the luminescence characteristics of the devices were investigated.All of the films are fabricated by thermal deposition way onto a precleaned ITO-coated glass substrate (sheet resistance 50 Ω/□) at a background pressure <2×10~(- 4) Pa. The deposition appartus is OLED high vacuum thermal evaporation coating system. The thickness of the deposited films is monitored by FTM-V film thickness monitor. The electroluminescence (EL) spectra, the photoluminescence (PL) spectra, voltage versus current and emission CIE coordinates of the devices were measured by a OLEDs testing system, comprosing of a 2400 Sourcemeter (Keithley) and a grating spectrometer of Omni- 300 series which is produced by Zolix of Beijing. All the measurements are carried out at room temperature. Change the doping concentration in the host material, when the doping mol fraction reaches 8%, the emission color coordinates of the device are very close to the standard red, and its color purity is more than 98%.When driven at 16 V, the emission CIE coordinates of the device are (x=0.67, y=0.32) , the color purity is 99.74%, which basically meet the needs of red light-emitting requirements in the full color display.