| 共振隧穿器件及其集成技术发展趋势和最新进展 |
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| 引用本文： | 郭维廉,牛萍娟,苗长云. 共振隧穿器件及其集成技术发展趋势和最新进展[J]. 微纳电子技术, 2005, 42(7): 298-304 |
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| 作者姓名： | 郭维廉 牛萍娟 苗长云 |
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| 作者单位： | 天津工业大学信息与通讯工程学院,天津,300160 |
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| 基金项目： | 天津市应用基础研究重点项目资助(043800811) |
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| 摘 要： | 介绍了共振隧穿器件及其特点,论述了该类器件及其集成技术的发展趋势和最新进展,特别是SiO 2S/iS/iO 2共振隧穿二极管及其集成电路的研制成功是一个突破性的进展。
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| 关 键 词： | 共振隧穿二极管 共振隧穿三极管 集成电路 |
| 文章编号： | 1671-4776(2005)07-0298-07 |
| 修稿时间： | 2005-04-30 |
Development Trend and New Progress on Resonant Tunneling Devices and Its Integration |
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| GUO Wei-lian,NIU Ping-juan,MIAO Chang-yun. Development Trend and New Progress on Resonant Tunneling Devices and Its Integration[J]. Micronanoelectronic Technology, 2005, 42(7): 298-304 |
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| Authors: | GUO Wei-lian NIU Ping-juan MIAO Chang-yun |
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| Abstract: | Resonant tunneling devices and its features were introduced.The development trend and new progress on resonant tunneling devices and its integration were discussed.In the new progress,particularly,the fabrication of the SiO2/Si/SiO2 resonant tunneling diode and its integration circuit is a advance progress in this area. |
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| Keywords: | resonant tunneling diode(RTD) resonant tunneling transistor(RTT) IC |
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