Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy |
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Authors: | P S Wijewarnasuriya M D Lange S Sivananthan J P Faurie |
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Affiliation: | (1) Physics Department, University of Illinois at Chicago, Microphysics Laboratory, 845 W. Taylor St., Room 2236, 60607-7059 Chicago, IL;(2) EPIR Ltd., P.O. Box 803827 - P2E, 60680-3827 Chicago, IL |
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Abstract: | We have studied the minority-carrier lifetime on intentionally indium-doped (211)B molecular beam epitaxially grown Hg1-xCdxTe epilayers down to 80K with x ≈ 23.0% ± 2.0%. Measured lifetimes were explained by an Auger-limited band-to-band recombination
process in this material even in the extrinsic temperature region. Layers show excellent electron mobilities as high as ≈2
x 105 cm2v-1s-1 at low temperatures. When the layers are compensated with Hg vacancies, results show that the Schockley-Read recombination
process becomes important in addition to the band-to-band processes. From the values of τn0 and τp0 of one sample, the obtained defect level is acceptor-like and is somewhat related to the Hg vacancies. |
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Keywords: | HgCdTe Impurity doped Minority carrier lifetime Photoconductive decay |
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