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溅射功率对CIGS吸收层前驱膜成分和结构的影响
引用本文:郑麒麟,庄大明,张弓,李秋芳. 溅射功率对CIGS吸收层前驱膜成分和结构的影响[J]. 太阳能学报, 2006, 27(11): 1108-1112
作者姓名:郑麒麟  庄大明  张弓  李秋芳
作者单位:清华大学机械工程系,北京,100084
基金项目:面向21世纪教育振兴行动计划(985计划)
摘    要:采用中频交流磁控溅射方法制备了CuIn、CuGa和CIG合金膜。采用SEM和XRD观察和分析了各种薄膜的表面形貌、成分和组织结构。着重分析了靶功率密度对薄膜成分、晶体结构的影响。结果表明,通过调节靶功率密度,能精确控制薄膜中CuI、n、Ga比例。制备得到了Cu/(In Ga)原子比接近1,且Ga/(In Ga)比例可调的成分分布均匀的CIG薄膜。CIG前驱膜是以Cu11In9为基础相,Ga原子主要是以替代In原子的固溶体形式存在。当溅射CuIn和CuGa合金靶的功率密度分别为0.26和0.10 W/cm2时,可制备得到由Cu11In9和CuIn两相组成的理想的CIG前驱膜。

关 键 词:CIGS  太阳能电池  磁控溅射  前驱膜
文章编号:0254-0096(2006)11-1108-05
收稿时间:2005-06-09
修稿时间:2005-06-09

EFFECTS OF SPUTTERING POWER ON COMPOSITIONS AND MICROSTRUCTURES OF PRECURSOR FILMS FOR CIGS ABSORBER
Zheng Qilin,Zhuang Daming,Zhang Gong,Li Qiufang. EFFECTS OF SPUTTERING POWER ON COMPOSITIONS AND MICROSTRUCTURES OF PRECURSOR FILMS FOR CIGS ABSORBER[J]. Acta Energiae Solaris Sinica, 2006, 27(11): 1108-1112
Authors:Zheng Qilin  Zhuang Daming  Zhang Gong  Li Qiufang
Affiliation:Department of Mechanical Engineering, Tsinghua Unversity, Beijing 100084, China
Abstract:CuIn,CuGa and CuInGa(CIG) precursor films were prepared using middle frequency magnetron sputtering.SEM and XRD were used to observe and analyse the surface morphology,composition,and microstructure of different kinds of films.The effects of sputtering power on composition and microstructure of films were analyzed.The results showed that the atomic ratio of Cu,In and Ga in the films can be controlled accurately by adjusting the sputtering power.The CIG precursor film with a Cu/(In Ga) atomic ratio of approaching 1.0 and an adjustable Ga/(In Ga) ratio and with uniform distribution of all alloys was obtained.CIG precursor film is composed of Cu11In9 matrix phase. Ga exists mainly in solid solution by substituting In.Ideal CIG precursor film composed of both Cu11In9 and CuIn phases could be obtained under the condition of sputtering power of 0.26 and 0.10 W/cm2 for CuIn and CuGa targets,respectively.
Keywords:CIGS  solar cell  magnetron sputtering  precursor film
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