| 制备条件对Ge2Sb2Te5薄膜电学性能的影响 |
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| 引用本文： | 夏吉林,刘波,宋志棠,封松林.制备条件对Ge2Sb2Te5薄膜电学性能的影响[J].半导体学报,2006,27(13):155-157. |
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| 作者姓名： | 夏吉林 刘波 宋志棠 封松林 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所 半导体功能薄膜工程技术研究中心，上海 200050;中国科学院上海微系统与信息技术研究所 半导体功能薄膜工程技术研究中心，上海 200050;中国科学院上海微系统与信息技术研究所 半导体功能薄膜工程技术研究中心，上海 200050;中国科学院上海微系统与信息技术研究所 半导体功能薄膜工程技术研究中心，上海 200050 |
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| 摘 要： | 研究了磁控溅射制备Ge2Sb2Te5薄膜时，制备条件诸如功率、气压等对薄膜性能的影响. 主要通过测量薄膜方块电阻随退火温度的变化情况，探索Ge2Sb2Te5薄膜的成长机理. 实验结果表明，不同溅射功率下制备的薄膜经不同温度退火后方块电阻没有明显的区别，而随着溅射气压的上升，薄膜方块电阻随退火温度的增加，下降的速率增加，意味着由面心立方结构转变为六方结构所需的结晶温度降低
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| 关 键 词： | Ge2Sb2Te5 电学性能 制备条件 相变 |
Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films |
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| Xia Jilin,Liu Bo,Song Zhitang and Feng Songlin.Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films[J].Chinese Journal of Semiconductors,2006,27(13):155-157. |
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| Authors: | Xia Jilin Liu Bo Song Zhitang and Feng Songlin |
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| Affiliation: | Research Center of Functional Semiconductor Film Engineering Technology,Shanghai Institute ofMicrosystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Research Center of Functional Semiconductor Film Engineering Technology,Shanghai Institute ofMicrosystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Research Center of Functional Semiconductor Film Engineering Technology,Shanghai Institute ofMicrosystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Research Center of Functional Semiconductor Film Engineering Technology,Shanghai Institute ofMicrosystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | The influence of deposition parameters such as sputtering power and pressure during sputtering on the electrical properties of Ge2Sb2Te5 is investigated.Through measuring the square resistances changing with different annealing temperatures,the deposition mechanism is researched.The results indicate that the sputtering power does not influence the square resistance distinctly,but with the sputtering pressure increasing,the resistance decreases with annealing temperature much more quickly,which means that the crystallization temperature for phase-change from face-centered-cubic to hexagonal structure decreases with the increasing of sputtering pressure. |
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| Keywords: | Ge2Sb2Te5 electrical properties deposition parameters phase change |
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