A deep-submicrometer microwave/digital CMOS/SOS technology |
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| Authors: | Schmitz AE Walden RH Larson LE Rosenbaum SE Metzger RA Behnke JR Macdonald PA |
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| Affiliation: | Hughes Res. Lab., Malibu, CA; |
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| Abstract: | 0.35-μm complementary metal-oxide-semiconductor (CMOS)/silicon-on-sapphire (SOS) n- and p-channel MOSFETs with a metal-over-polysilicon T-gate structure for monolithic microwave integrated circuit (MMIC) and digital applications are reported. The measured values for the current-gain cutoff frequency fT were ⩾20 GHz for both n-channel and p-channel devices, and the values for the unilateral power-gain cutoff frequency fmax were 37 GHz for the p-channel and 53 GHz for the n-channel MOSFETs. The low effective resistance of the T-gate structure contributed to the very high fmax values. It is believed that these are the highest fT and fmax values ever reported for MOS devices. The potential of SOS submicrometer MOSFETs for microwave circuit applications is demonstrated |
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