| 射频磁控溅射制备掺Al的纳米Si-SiO2复合薄膜及其光致发光特性 |
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| 引用本文： | 郭亨群,杨琳琳,王启明.射频磁控溅射制备掺Al的纳米Si-SiO2复合薄膜及其光致发光特性[J].功能材料,2006,37(11):1706-1708. |
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| 作者姓名： | 郭亨群 杨琳琳 王启明 |
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| 作者单位： | 华侨大学,信息科学与工程学院,福建,泉州,362021;中国科学院半导体研究所,北京,100083 |
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| 摘 要： | 采用射频磁控技术和退火处理制备掺Al的纳米Si-SiO2复合薄膜.通过X射线衍射(XRD)、X射线光电子能谱(XPS)和傅里叶变换红外光谱(FTIR)表征了薄膜的结构,组分和成键情况.掺Al在SiO2中造成氧空位,使薄膜光致发光强度增强,并出现新的发光峰.退火温度对掺Al薄膜的光致发光的峰位和峰强有较大影响.
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| 关 键 词： | Al-Si-SiO2薄膜 磁控溅射 光致发光 |
| 文章编号： | 1001-9731(2006)11-1706-03 |
| 收稿时间： | 2006-06-20 |
| 修稿时间： | 2006-09-18 |
The preparation and photoluminescence of Al-deped nc-Si-SiO2 composite films by r.f. magnetron sputtering |
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| GUO Heng-qun,YANG Ling-ling,WANG Qi-ming.The preparation and photoluminescence of Al-deped nc-Si-SiO2 composite films by r.f. magnetron sputtering[J].Journal of Functional Materials,2006,37(11):1706-1708. |
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| Authors: | GUO Heng-qun YANG Ling-ling WANG Qi-ming |
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| Affiliation: | 1.College of Information Science and Technology, Huaqiao University, Quanzhou 362021, China; 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Al-doped nc-Si-SiO_2 composite films were prepared by r.f.magnetron sputtering and annealing.The structure,composition and bond formation of the films were characterized by X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS)and Fourier transform infrared spectroscopy(FTIR).Al-doping produced ox- ygen vacancies in SiO_2,thus increased PL intensity and formed new PL peaks.Annealing temperature affects the peak position and the intensity of PL. |
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| Keywords: | Al-Si-SiO2 film magnetron sputtering photoluminescence |
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