| 硅脉冲微波功率器件增益退化机理研究 |
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| 引用本文： | 廖超,来萍,李斌,崔晓英. 硅脉冲微波功率器件增益退化机理研究[J]. 电子产品可靠性与环境试验, 2007, 25(6): 4-7 |
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| 作者姓名： | 廖超 来萍 李斌 崔晓英 |
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| 作者单位： | 华南理工大学物理科学与技术学院,广东,广州,510640;信息产业部电子第五研究所,广东,广州,510610;信息产业部电子第五研究所,广东,广州,510610;华南理工大学物理科学与技术学院,广东,广州,510640 |
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| 摘 要： | 介绍了硅双极型微波功率晶体管的发展历史和应用现状.针对硅脉冲微波功率器件增益退化的失效模式,通过对硅脉冲微波功率器件直流参数的统计分析,初步得出了其失效机理.
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| 关 键 词： | 微波功率晶体管 功率增益 失效机理 退化 |
| 文章编号： | 1672-5468（2007）06-0004-04 |
| 收稿时间： | 2007-09-10 |
| 修稿时间： | 2007-10-11 |
Study on the Gain Degradation Mechanism of the Silicon Microwave Pulsed Power Transistor |
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| LIAO Chao,LAI Ping,LI Bin,CUI Xiao-ying. Study on the Gain Degradation Mechanism of the Silicon Microwave Pulsed Power Transistor[J]. Electronic Product Reliability and Environmental Testing, 2007, 25(6): 4-7 |
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| Authors: | LIAO Chao LAI Ping LI Bin CUI Xiao-ying |
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| Abstract: | In this paper, the development history and application status of silicon microwave pulsed power transistors are presented. With respect to the gain degradation of silicon microwave pulsed power transistors, the failure mechanism is obtained based on the statistical analysis of the DC parameters of the silicon microwave pulsed power transistors. |
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| Keywords: | microwave power transistor power gain failure mechanism degradation |
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